12 1 - cathode 2 - anode back of case - cathode apt100s20b(g) 200v 120a 053-6021 rev c 7-2006 to-247 1 2 static electrical characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-247 package or surface mount d 3 pak package ? low forward voltage ? high blocking voltage ? low leakage current product applications ? parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters ? snubber diode ? uninterruptible power supply (ups) ? 48 volt output rectifiers ? high speed rectifiers high voltage schottky diode symbol v f i rm c t unit volts m a pf min typ ma x .89 .95 1.06 .76 2 40 470 forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 100a i f = 200a i f = 100a, t j = 125c v r = 200v v r = 200v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current 1 (t c = 125c, duty cycle = 0.5) rms forward current (square wave, 50% duty) 1 non-repetitive forward surge current (t j = 45c, 8.3ms) operating and storagetemperature range lead temperature for 10 sec. avalanche energy (2a, 50mh) symbol v r v rrm v rwm i f(av) i f(rms) i fsm t j ,t stg t l e val unit volts amps c mj apt100s20b(g) 200 120 318 1000 -55 to 150 300 100 microsemi website - http://www.microsemi.com
dynamic characteristics apt100s20b(g) 053-6021 rev c 7-2006 thermal and mechanical characteristics microsemi reserves the right to change, without notice, the specifications and information contained herein. 1 countinous current limited by package lead temperature. min typ max - 70 - 230 -6- - 110 - 690 -11- -95 - 1750 -32 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 100a, di f /dt = -200a/ s v r = 133v, t c = 25 c i f = 100a, di f /dt = -200a/ s v r = 133v, t c = 125 c i f = 100a, di f /dt = -700a/ s v r = 133v, t c = 125 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max .18 0.22 5.9 10 1.1 unit c/w oz g lb?in n?m 0.00817 0.0174 0.0593 0.00514 0.00242 0.0158 dissipated power (watts) t j ( c) t c ( c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext 0.095 0.384 d = 0.9
053-6021 rev c 7-2006 apt100s20b(g) typical performance curves duty cycle = 0.5 t j = 150c lead temperature limited t j = 125c v r = 133v 50a 100a 130a t rr q rr q rr t rr i rrm q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55c t j = 25c t j = 125c t j = 150c 130a 100a 50a 0 0.5 1.0 1.5 0 200 400 600 800 0 200 400 600 800 0 200 400 600 800 360 300 240 180 120 60 0 2500 2000 1500 1000 500 0 t j = 125c v r = 133v 100a 50a 130a t j = 125c v r = 133v 120 100 80 60 40 20 0 40 35 30 25 20 15 10 5 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/s) -di f /dt, current rate of change (a/s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change t j , junction temperature (c) case temperature (c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) time in avalanche ( s) figure 8. junction capacitance vs. reverse voltage figure 9. single pulse uis soa 1.2 1.0 0.8 0.6 0.4 0.2 0.0 6000 5000 4000 3000 2000 1000 0 0 25 50 75 100 125 150 25 50 75 100 125 150 1 10 100 200 1 10 100 1000 2500 400 300 200 100 0 200 100 50 10 5 1 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 700a/s) peak avalanche current i f(av) (a) (a)
apt100s20b(g) 053-6021 rev c 7-2006 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30h d.u.t. +18v 0v v r t rr / q rr waveform apt20m20lll to-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) bsc 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) cathode anode cathode
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